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Creep Properties and Interfacial Microstructure of SiC Whisker Reinforced Si3N4
Published online by Cambridge University Press: 21 February 2011
Abstract
Preliminary creep tests were performed on SiC whisker reinforced and matrix Si3N4 material fabricated by the NPS technique. The material was extensively crystallised in the as received material, leaving only thin amorphous films surrounding the grains. No improvement in the creep resistance could be detected for the whisker reinforced material. The deformation mechanisms were found to be that of cavitation in the form of microcracks, predominantly at the whisker/matrix interfaces, and the formation of larger cracks. Extensive oxidation of the samples, as a result of high temperature exposure to air, was observed for the materials tested at 1375°C.
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