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Creation of 3D Patterns in Si by Focused Ga-Ion Beam and Anisotropic Wet Chemical Etching

Published online by Cambridge University Press:  25 February 2011

Wei Chen ,
P. Chen ,
A. Madhukar ,
R. Viswanathan  and
J. So
Wei Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
P. Chen
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
A. Madhukar
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
R. Viswanathan
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
J. So
Affiliation:
Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, CA 90089–0241
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Abstract

We report the realization of free standing 3D structures as tall as ∼ 7μm with nano-scale thickness in Si using the technique of Ga focused ion beam implantation and sputtering followed by wet chemical etching. Some of the previously investigated subjects such as anisotropie etching behavior of crystalline Si and etch stop effect of Ga+implanted Si etched in certain anisotropie chemical etchants have been further explored with the emphasis on exploiting them in realizing free standing structures. The design and fabrication considerations in achieving such free standing structures are discussed and some typical structures fabricated by this technique are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 599
Copyright
Copyright © Materials Research Society 1993

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