Published online by Cambridge University Press: 28 March 2011
We present a study on the liquid/solid interface, which can be electrostatically doped to a high carrier density (n~1014 cm-2) by electric-double-layer gating. Using micro-cleavage technique on the layered materials: ZrNCl and graphene, atomically flat channel surfaces can be easily prepared. Intrinsic high carrier density transport regime is accessed at the channel interface of electric double-layer field effect transistor, where novel transport properties are unveiled as the field-induced superconductivity on the ZrNCl with high transition temperature at 15 K, and accessing a high carrier density up to 2×1014 cm-2 in graphene and its multi-layers.