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Cracking and Phase Transformation in Silicon During Nanoindentation

Published online by Cambridge University Press:  01 February 2011

Jae-il Jang ,
Songqing Wen ,
M. J. Lance ,
I. M. Anderson  and
G. M. Pharr
Jae-il Jang
Affiliation:
The University of Tennessee, Dept. of Mater. Sci. & Eng., Knoxville, TN 37996–2200, U.S.A. Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, TN 37831, U.S.A.
Songqing Wen
Affiliation:
The University of Tennessee, Dept. of Mater. Sci. & Eng., Knoxville, TN 37996–2200, U.S.A.
M. J. Lance
Affiliation:
Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, TN 37831, U.S.A.
I. M. Anderson
Affiliation:
Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, TN 37831, U.S.A.
G. M. Pharr
Affiliation:
The University of Tennessee, Dept. of Mater. Sci. & Eng., Knoxville, TN 37996–2200, U.S.A. Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, TN 37831, U.S.A.
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Abstract

Nanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U8.15
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Harding, D.S., Oliver, W.C., Pharr, G.M., Mater. Res. Soc. Symp. Proc. 356, 663 (1995).Google Scholar
2. Pharr, G.M., Mater. Sci. Eng. A253, 151 (1998).Google Scholar
3. Field, J.S., Swain, M.V., and Dukino, R.D., J. Mater. Res. 18, 1412 (2003).Google Scholar
4. Paris, P.C. and Sih, G.C., Am. Soc. Test. Mater. Spec. Tech. Pub. 381, 30 (1965).Google Scholar
5. Laugier, M.T., J. Mater. Sci. Lett. 6, 879 (1987).Google Scholar
6. Nihara, K., Morena, R., Hasselman, D.P.H., J. Mater. Sci. Lett. 1, 13 (1982).Google Scholar
7. Lawn, B.R., Evans, A.G., and Marshall, D.B., J. Am. Ceram. Soc. 63, 574 (1980).Google Scholar
8. Anstis, G.R., Chantikul, P., Lawn, B.R., Marshall, D.B., J. Am. Ceram. Soc. 64, 533 (1981).Google Scholar
9. Chen, C.P. and Leipold, M.H., Am. Ceram. Soc. Bull. 59, 469 (1980).Google Scholar
10. Tsai, Y.L. and Mecholsky, J.J. Jr, J. Mater. Res. 6, 1248 (1991).Google Scholar
11. Fitzgerald, A.M., Daukardt, R.H., and Kenny, T.W., Sens. Actuators A83, 194 (2000).Google Scholar
12. Pharr, G.M., Oliver, W.C., and Clark, D.R., Scripta Mater. 23, 1949 (1989).Google Scholar
13. Domnich, V. and Gogotsi, Y., Rev. Adv. Mater. 3, 1 (2002).Google Scholar
14. Domnich, V., Gogotsi, Y., and Dub, S., Appl. Phys. Lett. 76, 2214 (2000).Google Scholar
15. Juliano, T., Gogotsi, Y., and Domnich, V., J. Mater. Res. 18, 1192 (2003).Google Scholar
16. Pharr, G.M., Oliver, W.C., and Harding, D.S., J. Mater. Res. 6, 1129 (1991).Google Scholar