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Coupling of Defect Fields to Domains and Phase Transition Characteristics of Ferroelectric Thin Films with Charged Defects

Published online by Cambridge University Press:  14 January 2011

Ibrahim B. Misirlioglu ,
Hale N. Cologlu  and
Mehmet Yildiz
Ibrahim B. Misirlioglu
Affiliation:
Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli, 34956 Istanbul, Turkey
Hale N. Cologlu
Affiliation:
Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli, 34956 Istanbul, Turkey
Mehmet Yildiz
Affiliation:
Faculty of Engineering and Natural Sciences, Sabanci University, Tuzla/Orhanli, 34956 Istanbul, Turkey
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Abstract

We analyze the effect of charged defects on the electrical domains, phase transition characteristics and electrical properties of ferroelectric thin films with thin dead layers using a non-linear thermodynamic model. Depending on their density and field strength, defects can pin and couple to electrical domains in the film. For ultrathin films, depolarizing effects dominate and the transition from the paraelectric state is into the multidomain ferroelectric state during cooling and is strongly smeared. The competition between defect induced extrinsic effects and the dead layer related limit is demonstrated.

Keywords

ferroelectricitythin filmphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k03-26
Copyright
Copyright © Materials Research Society 2011

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References

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