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Coupled Effects of Light and Temperature on Degradation of a-Si:H

Published online by Cambridge University Press:  21 February 2011

Lisa E. Benatar ,
Michael Grimbergen ,
David Redfeeld  and
Richard H. Bube
Lisa E. Benatar
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305–2205
Michael Grimbergen
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305–2205
David Redfeeld
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305–2205
Richard H. Bube
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305–2205
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Abstract

The effects of excitation rate and temperature on the kinetics and steady-state behavior of metastable defect formation in hydrogenated amorphous silicon (a-Si:H) have been studied. The dependences on temperature of the lifetime, τ, and stretching parameter, β, from a stretched exponential description of the kinetics were measured for one sample. We do not see a linear dependence of β on temperature over die entire temperature range studied (270K–370K), and τ increases monotonically with decreasing temperature. Steady-state results show defect density to be dependent on bodi temperature and excitation rate over the ranges measured (from 395K to 470K and from 6 × 1020 to 2 × 1022 s-l cm-3). The gradual change in temperature dependence is explained by a distribution of barrier heights between the ground and metastable states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 117
Copyright
Copyright © Materials Research Society 1991

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References

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