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Co/SixGe1-x Alloy Formation on Strained SixGe1-x Layers

Published online by Cambridge University Press:  25 February 2011

M. C. Ridgway ,
R. G. Elliman ,
N. Hauser ,
J. -M. Baribeau  and
T. E. Jackman
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
R. G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
N. Hauser
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
J. -M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6, Canada.
T. E. Jackman
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6, Canada.
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Abstract

The thermally-induced Co/SixGe1-x reaction has been studied for a series of isochronal (25–600°C/20 min) and isothermal (600°C/u-240 min) annealing sequences using Rutherford backscattering spectrometry, transmission electron microscopy and sheet resistance measurements. Annealing at 600°C yields a reacted surface layer comprised of Si-rich CoSixGe1-x, Ge-rich SiyGe1-y and possibly CoSi2, with the two former constituents exhibiting a degree of epitaxial alignment with the substrate. The formation of Co/SiSixGe1-x alloys is discussed in terms of the ternary phase diagram.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 857
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Thomas, O., Delage, S., d'Heurle, F. M. and Scilla, G., Appl. Phys. Lett. 54, 228 (1989).Google Scholar
[2] Thomas, O., d'Heurle, F. M., Delage, S. and Scilla, G., Appl. Surf. Sci. 38, 27 (1989).Google Scholar
[3] Thomas, O., d'Heurle, F. M. and Delage, S., J. Mat. Res. 5, 1453 (1990).Google Scholar
[4] Thompson, R. D., Tu, K. N., Angillelo, J., Delage, S. and Iyer, S. S., J. Electrochem. Soc. 135, 3161 (1988).Google Scholar
[5] Buxbaum, A., Eizenberg, M., Raizman, A. and Schaffler, F., Appl. Phys. Lett. 59, 665 (1991).Google Scholar
[6] Liou, H. K., wu, X., Gennser, U., Kesan, V. P., Iyer, S. S., Tu, K. N. and Yang, E.S., Appl. Phys. Lett. 60, 577 (1992).Google Scholar
[7] Hong, Q. Z. and Mayer, J. W., J. Appl. Phys. 66, 611 (1989).Google Scholar
[8] Murarka, S. P., Suicides for VLSI Applications (Academic Press, New York, 1983).Google Scholar
[9] Ridgway, M. C., Elliman, R. G., Moss, S., Peterson, P. J., Baribeau, J. -M. and Jackman, T. E., J. Appl. Phys., submitted (1992).Google Scholar
[10] Baribeau, J. -M., Jackman, T. E., Houghton, D. C., Maigne, P. and Denhoff, M. W., J. Appl. Phys. 63, 5738 (1988).Google Scholar
[11] Wald, F. and Michalik, S. J., J. Less-Common Met. 24, 277 (1971).Google Scholar
[12] Krontiras, Ch, Georga, S. N., Sakkopoulos, S., Vitoratos, E. and Salmi, J., J. Phys.: Condens. Mat. 2, 3323 (1990).Google Scholar
[13] Ashburn, S. P., Ozturk, M. C., Wortman, J. J., Harris, G., Honeycutt, J. and Maher, D.M., J. Elec. Mat. 21, 81 (1992).Google Scholar