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Correlations between higher-order rings and microvoids in hydrogenated amorphous silicon
Published online by Cambridge University Press: 04 February 2015
Abstract
In this paper we report the structure of voids in several thousand atom models of hydrogenated amorphous silicon. The models are produced by jointly employing experimental information from Smets and coworkers [1] and first principles simulations [2]. We demonstrate the existence of a useful correlation between the presence of large irreducible rings and the voids in hydrogenated amorphous silicon networks. Molecular hydrogen is observed in the models, and discussed.
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- Information
- MRS Online Proceedings Library (OPL) , Volume 1757: Symposium UU – Structure-Property Relations in Amorphous Solids , 2015 , mrsf14-1757-uu04-07
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- Copyright © Materials Research Society 2015
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