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A Correlation Study of Thermal Stability on Porous Low k

Published online by Cambridge University Press:  01 February 2011

Y.F. Chow ,
T.H. Foo ,
L. Shen ,
J.S. Pan ,
A.Y. Du ,
Z.X. Xing ,
Y.J. Yuan ,
C.Y. Li ,
R. Kumar  and
P.D. Foo
T.H. Foo
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
L. Shen
Affiliation:
Institute of Materials Research & Engineering 3 Research Link, Singapore 117602
J.S. Pan
Affiliation:
Institute of Materials Research & Engineering 3 Research Link, Singapore 117602
A.Y. Du
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
Z.X. Xing
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
Y.J. Yuan
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
C.Y. Li
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
R. Kumar
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
P.D. Foo
Affiliation:
Institute of Microelectronics 11 Science Park Road, Singapore Science Park II, Singapore 117685
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Abstract

The thermal stability of organic porous low k, porous SiLK with a dielectric constant of 2.4, has been studied. Organic low k material SiLKTM, non-porous SiLK, with a dielectric constant 2.8 is used as a baseline for comparison. Each sample was subjected to annealing cycles, where each cycle was conducted in a vertical furnace for one hour in an N2 ambient. The annealing temperature was set at either 430°C or 450°C. After every alternate cycle, the film properties were measured and compared to the unannealed sample for changes in film shrinkage, refractive index, dielectric constant, roughness, breakdown voltage, pore size, hardness and Young's modulus. Changes in film properties were investigated and evaluated by using opti-probe, FTIR, XPS, AFM, mercury probe, nano-indentation, SEM and TEM techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B12.2
Copyright
Copyright © Materials Research Society 2002

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References

1.Technology Roadmap NTRS (1997) and ITRS (2001).Google Scholar
2. Morgen, M., Ryan, E.T., Zhao, J.H., Hu, C., Cho, T. and Ho, P.S., Ann. Rev. Mater. Sci. Vol. 30 (2000).Google Scholar
3. Azzam, RMA and NM, Bashara, “Ellipsometry and Polarized Light”, Elsevier (1997).Google Scholar
4. GR, Fowles, “Introduction to Modern Optics”, Holt, Rinehart & Winston (1968).Google Scholar
5. Kumar, Atul, “Characteristic of Low k Material and Low k / Metal interfaces for Interconnect Applications,” College pf Arts and Sciences, Dept of Physics, (1999).Google Scholar
6. Chuan Hu, B.S., “Study of thermal properties of low k dielectric thin films,” The University of Texas at Austin (2000).Google Scholar
7. Postava, K., Yamaguchi, T., Optics Express, Vol. 9, No 3, 141–151 (2001).Google Scholar