Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T01:30:37.120Z Has data issue: false hasContentIssue false
  • English
  • Français

Correlation of the Crystal Structural and Microstructural Effects of the Interfacial Processes Between Gold and GaAs

Published online by Cambridge University Press:  15 February 2011

Xian-Fu Zeng  and
D. D. L. Chung
Xian-Fu Zeng
Affiliation:
Center for the Joining of Materials, and Department of Metallurgical Engineering and Materials Science, Carnegie-Mellon University, Pittsburgh, PA 15213 (U.S.A.)
D. D. L. Chung
Affiliation:
Center for the Joining of Materials, Department of Metallurgical Engineering and Materials Science, and Department of Electrical Engineering, Carnegie-Mellon University, Pittsburgh, PA 15213 (U.S.A.)
Get access

Extract

The solid state interfacial reaction between gold and GaAs, was found to result in small surface microstructural changes, whereas melting of the reaction product (tentatively identified as AuGa) and subsequent solidification to form the β phase resulted in aligned rectangular protrusions with sharp corners. The rectangular protrusions were found to be much finer in scale after heating in a vacuum than after heating in argon at 1 atm. High cooling rates (e.g. 40°C min−1) during solidification resulted in the formation of both rectangular protrusions and irregularly shaped protrusions with jagged boundaries and topography. The irregular protrusions were associated with a phase tentatively identified as Au2Ga. Rapid cooling at about 600°C min−1 during solidification resulted in the formation of the gold-rich terminal solid solution (α phase) which appeared as aligned rectangular protrusions with rounded corners.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 213
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Zeng, X.-F. and Chung, D. D. L., J. Appl. Phys., to be published.Google Scholar
2 Leung, S., Wong, L. K., Chung, D. D. L. and Milnes, A. G., J. Electrochem. Soc., to be published.Google Scholar
3 Gyulai, H., Mayer, J. W., Rodriquez, V., Yu, A. Y. C. and Gopen, H. J., J. Appl. Phys., 42 (1971) 3578.Google Scholar
4 Todd, C. J., Ashwell, G. W. B., Speight, J. D. and Heckingbottom, R., Metal-Semiconductor Contacts, in Inst. Phys. Conf. Ser. 22 (1974).Google Scholar
5 Magee, T. J. and Peng, J., Phys. Status Solidi A, 32 (1975) 695.CrossRefGoogle Scholar
6 Kumar, K., Jpn. J. Appl. Phys., 18(1979) 713.Google Scholar
7 Christou, A., Solid-State Electron., 22 (1979) 141.Google Scholar
8 Kinsbron, E., Gallagher, P. K. and English, A. T., Solid-State Electron., 22 (1979) 517.Google Scholar
9 Vandenberg, J. M. and Kinsbron, E., Thin Solid Films, 65 (1980) 259.Google Scholar
10 Miller, D. C., J. Electrochem. Soc., 127(1980) 468.Google Scholar