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Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD

Published online by Cambridge University Press:  21 February 2011

X. Li ,
A. M. Jones ,
S. D. Roh ,
D. A. Turnbull ,
E. E. Reuter ,
S. Q. Gu ,
S. G. Bishop  and
J. J. Coleman
X. Li
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
A. M. Jones
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
S. D. Roh
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
D. A. Turnbull
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
E. E. Reuter
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
S. Q. Gu
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
S. G. Bishop
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
J. J. Coleman
Affiliation:
Microelectronics Laboratory, University of Illinois, Urbana, IL 61801
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Abstract

We have studied GaN films grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrates using different buffer layer structures. Surface morphology was characterized by scanning electron microscopy (SEM). Optical properties were measured using photoluminescence (PL), cathodoluminescence (CL) spectroscopy and catho-luminescence wavelength imaging (CLWI) method. It is found that the hexagonal pit-like defects in morphology are associated with the D-A/e-A transition band in the PL and CL spectra. The same correlation of morphology with optical properties is observed for the GaN films grown by selective area epitaxy (SAE). In addition, the possibility of improving optical quality by SAE is investigated. The SAE depth profile is simulated for the first time, and satisfactory results are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 943
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 (a) Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B. et al. , J. Appl. Phys. 76, 1363 (1994). (b) S. Strite, M. E. Lin, and H. Morkoc, Thin Sol. Films 231, 197 (1993); S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992). (c) R. F. Davis, Proc. IEEE 79, 702 (1991). (d) J. H. Edgar, J. Mater. Res. 7, 235 (1992). (e) J. I. Pankove, Mater. Res. Soc. Symp. Proc. 162, 515 (1990). (f) D. Elwell and M. M. Elwell, Prog. Cryst. Growth Charact. 17, 53 (1988).Google Scholar
2 Li, X., Forbes, D. V., Gu, S. Q., Turnbull, D. A., Bishop, S. G. and Coleman, J. J., J. Electron. Mater. 24, 1711 (1995).Google Scholar
3 Jones, A. M., Osowski, M. L., Lammert, R. M., Dantzig, J. A., and Coleman, J. J., J. Electron. Mater. 24, 1631 (1995).Google Scholar
4 Grundmann, M., Christen, J., Bimberg, D., Hashiomoto, A., Fukunaga, T., and Watanabe, N., Appl. Phys. Lett. 58, 2090 (1991).Google Scholar
5 Rammohan, K., Rich, D. H., Goldman, R. S., Chen, J., Wieder, H. H., and Kavanagh, K. L., Appl. Phys. Lett. 66, 869 (1995).Google Scholar
6 Christen, J., Grundmann, M., and Bimberg, D., J. Vac. Sci. & Technol. B 9, 2358 (1991).Google Scholar
7 Turnbull, D. A. et al. , unpublished.Google Scholar
8 Fischer, F., Wetzel, C., Haller, E. E., and Meyer, B. K., Appl. Phys. Lett. 67, 1298 (1995).Google Scholar
9 Gray, L. J., Chrisholm, M. F., and Kaplan, T., Appl. Phys. Lett. 66, 1924 (1995) and references therein.Google Scholar
10 Yamaguchi, M., Tachikawa, M., Sugo, M., Kondo, S., and Itoh, Y., Appl. Phys. Lett. 56, 27 (1990).Google Scholar
11 Ohashi, T., J. Mater. Res. 7, 3032 (1992).Google Scholar
12 Karam, N. H., Haven, V., Vernon, S. M., El-Marsry, N., Lingunis, E. H., and Haegel, N., J. Cryst. Growth 107, 129 (1991).Google Scholar
13 Akasaki, I. and Amano, H., J. Electrochem. Soc. 141, 2266 (1994).Google Scholar
14 Kato, Y., Kitamura, S., Haramatsu, K., and Sawaki, N., J. Cryst. Growth 144, 133 (1994).Google Scholar
15 Nagahara, M., Miyoshi, S., Yaguchi, H., Onabe, K., Shiraki, Y., and Ito, R., J. Cryst. Growth 145, 197 (1994); Jpn. J. Appl. Phys. part 1, 33, 694 (1994).Google Scholar