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Correlation of Stress Relaxation and Microstructure Change in Polycrystalline Thin Films on Substrates: Au on Si <100> at RT

Published online by Cambridge University Press:  26 July 2012

A. C. Vermeulen ,
R. Delhez  and
E. J. Mittemeijer
A. C. Vermeulen
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, The Netherlands.
R. Delhez
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, The Netherlands.
E. J. Mittemeijer
Affiliation:
Delft University of Technology, Laboratory of Materials Science, Rotterdamseweg 137, 2628 AL Delft, The Netherlands.
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Abstract

Stress relaxation in polycrystalline layers can be explained by processes, in which the microstructure plays a dominant role. The microstructure itself may also be subjected to changes. With X-ray diffraction information about both the stress and the microstructure can be obtained without destroying the specimen and without disturbing the stress relaxation process.

In this paper a model system is studied: Au on Si<100>. The specimens showed a simultaneous decrease of macrostress and dislocation density with time at room temperature. This could be interpreted on the basis of a model founded on thermally activated dislocation motion. It followed that the grain size is an important parameter for the change of the dislocation density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 103
Copyright
Copyright © Materials Research Society 1992

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