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Correlation of Oxygen and Recombination Centers on a Microscale in Asgrown Czochralski Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

K. Nauka ,
H. C. Gatos  and
J. Lagowski
K. Nauka
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
H. C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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Abstract

Quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime, with a spacial resolution of about 20 μm, were obtained in as-grown dislocationfree CZ-Si crystals employing a double laser absorption technique. It was found that maxima (minima) in oxygen concentration along the crystal growth direction coincide with minima (maxima) of the lifetime. It was further found that the relation between changes in oxygen concentration and in lifetime varies in the radial direction indicating that “as-grown” oxygen precipitates are involved in lifetime limiting processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 177
Copyright
Copyright © Materials Research Society 1982

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References

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