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Correlation of Electrical Properties With Defects in A Homoepitaxial Chemical-Vapor-Deposited Diamond

Published online by Cambridge University Press:  10 February 2011

S. Han ,
G. Rodriguez ,
A. Taylori ,
M. A. Plano ,
M. D. Moyer ,
M. A. Moreno ,
L. S. Pan ,
D. B. Black ,
H. Burdette  and
J. W. Ager
...Show all authors
S. Han
Affiliation:
Los Alamos National Laboratory, D429, Los Alamos, NM 87545, U.S.A.
G. Rodriguez
Affiliation:
Los Alamos National Laboratory, D429, Los Alamos, NM 87545, U.S.A.
A. Taylori
Affiliation:
Los Alamos National Laboratory, D429, Los Alamos, NM 87545, U.S.A.
M. A. Plano
Affiliation:
Crystallume, Inc., 3506 Bassett Street, Santa Clara, CA 95054, U.S.A.
M. D. Moyer
Affiliation:
Crystallume, Inc., 3506 Bassett Street, Santa Clara, CA 95054, U.S.A.
M. A. Moreno
Affiliation:
Crystallume, Inc., 3506 Bassett Street, Santa Clara, CA 95054, U.S.A.
L. S. Pan
Affiliation:
Sandia National Laboratories, MS9162, 7011 East Avenue, CA 94551, U.S.A.
D. B. Black
Affiliation:
NIST, 223/A163, Gaithersburg, MD 20899, U.S.A.
H. Burdette
Affiliation:
NIST, 223/A163, Gaithersburg, MD 20899, U.S.A.
J. W. Ager
Affiliation:
Lawrence Berkeley National Laboratory, Univeristy of California, Berkeley, CA 94720, U.S.A.
A. Chen
Affiliation:
Lawrence Berkeley National Laboratory, Univeristy of California, Berkeley, CA 94720, U.S.A.
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Abstract

A high-quality, low-stress 200 gim epitaxial diamond film has been grown on a 400 μm thick high-temperature-high-pressure Ila diamond. X-ray diffraction images of the film indicate that a large region of the film is fairly defect free and individual dislocations have been imaged in this region. Depth-resolved Raman results indicate that the region of the film with a low density of defects also has lower stress than in the higher defect density region. Transient photoconductivity measurements were performed on the high and low line defect density regions of the homoepitaxial diamond film to determine the effects of the stress and defect density on the combined electron-hole mobility and carrier lifetime. The correlation between the electrical properties and the x-ray diffraction imaging suggests that line defects may not be the limiting factor in the carrier transport at the present film quality

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 343
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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