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Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

Published online by Cambridge University Press:  01 February 2011

H. Águas ,
L. Pereira ,
A. Goullet ,
R. Silva ,
E. Fortunato  and
R. Martins
H. Águas
Affiliation:
Laboratoire des plasmas et Couches Minces, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes cedex 3 - France
L. Pereira
Affiliation:
Laboratoire des plasmas et Couches Minces, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes cedex 3 - France
A. Goullet
Affiliation:
Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa and CEMOP, Campus da Caparica, 2829-516 Caparica, Portugal
R. Silva
Affiliation:
Laboratoire des plasmas et Couches Minces, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes cedex 3 - France
E. Fortunato
Affiliation:
Laboratoire des plasmas et Couches Minces, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes cedex 3 - France
R. Martins
Affiliation:
Laboratoire des plasmas et Couches Minces, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, 44322 Nantes cedex 3 - France
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Abstract

In this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A18.16
Copyright
Copyright © Materials Research Society 2003

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References

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