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Correlation Between the Quantized Energies and the Photovoltaic Spectra for a GaAs/A1GaAs Quantum Well Structure

Published online by Cambridge University Press:  10 February 2011

O. L. Russo ,
V. Rehn ,
T. W. Nee  and
K. A. Dumas
O. L. Russo
Affiliation:
Physics Department, New Jersey Institute of Technology, Newark, NJ, 07102
V. Rehn
Affiliation:
Physics Department, New Jersey Institute of Technology, Newark, NJ, 07102
T. W. Nee
Affiliation:
Michelson Laboratory, China Lake, CA 93555
K. A. Dumas
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena CA 91109.
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Abstract

We have measured the photovoltaic spectra at 300K for a PIN GaAs/AlGaAs structure containing five coupled wells (50A/28A) grown by molecular beam epitaxy (MBE). The spectra were obtained in the energy range from 1.40 eV to 1.60 eV. This is the region in which optical transitions between the sub-band valence and conduction states are possible. Five direct optical transitions are allowed for this structure. These transitions are normally difficult to measure at room temperature because of broadening, nevertheless, some of the allowed transitions were observed from the photovoltaic spectra and agreed with calculations. We have previously shown that measurements made using electroreflectance (ER) agree with these results. However, with ER, three possible transitions were observed but only one with certainty, possibly because of interference caused by adjacent line spectra interaction. This interference appears to be less pronounced in the photovoltaic spectra, which aids in the identification of transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 575
Copyright
Copyright © Materials Research Society 1996

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References

[1] Aspnes, D.E., [ EMIS Datareview RN 1537, Rn 1538 ], EMIS Datareviews Series No. 2, INSPEC, Properties of Gallium Arsenide, Second Edition, 1990.Google Scholar
[2] Bardeen, J., Blatt, FJ., and Hall, L.H., Proceedings of Atlantic City Photo-conductivity Conference (1954), p.146 (John Wiley and Sons and Chapman and Hall, 1956)Google Scholar
[3] Macfarlane, G.G., McLean, T.P., Quarrington, J.E. and Roberts, V., Proc. Phys. Soc., 71, 863 (1958).Google Scholar
[4] Elliott, R.J., Phys. Rev. 108, 1384 (1957).Google Scholar
[5] Sturge, M.D., Phys. Rev. 127, 768 (1962).Google Scholar
[6] Palik, Edward D., Handbook of Optical Constants of Solids, Edited by Edward D., Palik (Acad. Press, 1985), p.429–443.Google Scholar
[7] Casey, H.C., Sell, D.D., and Wecht, K.W., J. Appl. Phys. 46, 250 (1975).Google Scholar
[8] See For example, McKelvey, John P., Solid State and Semiconductor Physics, (Harper and Row, 1966), p. 460ff.Google Scholar
[9] Russo, O.L., Rehn, V., Nee, T.W. and Dumas, K.A. and in PhysicsApplications of Defects in Advanced Semiconductors, edited by Manasreh, M.O., von Bardeleben, H.J., Pomrenke, G.S., and Lannoo, M.(Mater. Res. Soc. Proc. 325, Pittsburgh, PA 1994).Google Scholar
[10] Hasegawa, S., Tanaka, A. and Sukegawa, T., J. Appl. Phys. 55, 3188, (1984).Google Scholar
[11] Sell, D.D., Phys. Rev. B 6, 3750 (1972).Google Scholar
[12] Varshni, Y.P., Physica (Utrecht), 34, 149, (1967).Google Scholar
[13] Lautenschlager, P., Garriga, M., Logothetidis, S., and Cardona, M., Phys. Rev. B 35, 9174 (1987).Google Scholar
[14] Cardona, M., Solid State Physics, Suppl. 11, ed. by Seitz, F., Turnbull, D. and Ehrenreich, H. (Academic Press, New York, 1969).Google Scholar
[15] Aspnes, D.E., Surf. Sci. 37, 418 (1973).Google Scholar