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Correlation Between the Interfacial Nonuniformity and the Specific Contact Resistance of Ohmic Contacts to Gaas

Published online by Cambridge University Press:  25 February 2011

T. Q. Tuy ,
I. Mojzes ,
V. V. Tuyen  and
I. Cseh
T. Q. Tuy
Affiliation:
Research Institute for Technical Physics of The Hungarian Academy of Sciences, Budapest, P.O.Box 76. H-1325, Hungary
I. Mojzes
Affiliation:
Research Institute for Technical Physics of The Hungarian Academy of Sciences, Budapest, P.O.Box 76. H-1325, Hungary
V. V. Tuyen
Affiliation:
Research Institute for Technical Physics of The Hungarian Academy of Sciences, Budapest, P.O.Box 76. H-1325, Hungary
I. Cseh
Affiliation:
Research Institute for Technical Physics of The Hungarian Academy of Sciences, Budapest, P.O.Box 76. H-1325, Hungary
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Abstract

Considering the effect of the simultaneous presence and interaction of the different phases at the contact, a modification of the model presented by Wu and coworkers (Solid-St. Electron. 29 (1986) 489] for explanation of ohmic contact resistance of n-GaAs was developed. The modified model combines the existence of the mixed phase structure of AuGeNi/n-GaAs contact with assumptions proposed by Wu et al. that the specific contact resistance Rc contains two parts Rcl and Rc2, where Rc1 is the specific contact resistance of the alloyed and underlaying doped contact region, and Rc2, is that of the high-low junction between the heavily doped contact region and the bulk semiconductor. The Rc1 depends strongly on the apparent barrier height and the effective impurity concentration formed by doping from the contact alloys during annealing. In the present paper a new theoretical model for Rc1 is proposed and compared with the experimental results.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 381
Copyright
Copyright © Materials Research Society 1990

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References

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