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Correlation between Powder in the Plasma and Stability of High Rate Deposited a-Si:H

Published online by Cambridge University Press:  01 February 2011

Guozhen Yue
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Gautam Ganguly
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Baojie Yan
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Jeffrey Yang
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
Subhendu Guha
Affiliation:
United Solar Ovonic Corporation, 1100 West Maple Road, Troy, Michigan 48084
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Abstract

Hydrogenated amorphous silicon (a-Si:H) solar cells incorporating high deposition rate (8-10Å/s) intrinsic layers were deposited using modified very high frequency (MVHF) plasma. We have monitored the light scattered from powder generated in the plasma using an Ar-laser and a silicon photodiode. This simple, non-invasive technique allows us to make measurements on the same reactor used to make the solar cells. First, we have varied the total flow rate and observed a maximum in the scattered light intensity from powder in the plasma during the deposition of the intrinsic layer, and correlated this with the degradation, as well as the stabilized performance of the solar cells. Then, we have studied the effects of varying the deposition temperature and/or the addition of germane to the gas mixture on the scattered light intensity due to powder in the plasma.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

[1] Hayashi, R., Takagi, T., Ganguly, G., Fukawa, M., Kondo, M., and Matsuda, A., Proc. 2nd World Conf. on PVSEC, Vienna, 929 (1998).Google Scholar
[2] Cabarrocas, P. Roca i, MRS Symp. Proc. 507, 855 (1998).10.1557/PROC-507-375Google Scholar
[3] Yang, J., Yan, B., Banerjee, A., and Guha, S., MRS Symp. Proc. 664, A11.3 (2001).10.1557/PROC-664-A11.3Google Scholar
[4] Ganguly, G., Wood, G., Newton, J., Bennett, M., Carlson, D., and Arya, R., MRS Symp. Proc. 715, 55 (2002).10.1557/PROC-715-A1.4Google Scholar
[5] Matsuoka, Y., Shiratani, M., Fukuzawa, T., Watanabe, Y., and Kim, K.., Jpn. J. Appl. Phys. 38 4556 (1999).10.1143/JJAP.38.4556Google Scholar
[6] Dorier, J., Hollenstein, C., Howling, A., and Kroll, U., J. Vac. Sci.& Technol. A10, 1048 (1992).10.1116/1.578200Google Scholar
[7] Friedman, A., Boufendi, L., Hbid, T., Potapkin, B., and Bouchoule, A., J. Appl. Phys. 79, 1303 (1996).10.1063/1.361026Google Scholar
[8] Takai, M., Nishimoto, T., Kondo, M., and Matsuda, A., Appl. Phys. Lett. 77, 2828 (2000).10.1063/1.1322373Google Scholar