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Correlation between microstructure, DC resistivity and magnetoresistance of SrRuO3 films.

Published online by Cambridge University Press:  11 February 2011

K. Khamchane
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE -412 96 Göteborg, Sweden.
R. Gunnarsson
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE -412 96 Göteborg, Sweden.
Z.G. Ivanov
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE -412 96 Göteborg, Sweden.
A. Vorobiev
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-4 1296 Göteborg, Sweden lnstitute for Physics of Microstructures RAS, N. Novgorod, GSP-105, 603600, Russia
P. Rundqvist′
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-4 1296 Göteborg, Sweden
S. Gevorgian
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-4 1296 Göteborg, Sweden Microwave and High Speed research Centre, Ericsson Microwave Systems, 431 84 Mölndal, Sweden
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Abstract

We have investigated the correlation between microstructure, DC resistivity and magnetoresistance of SrRuO3 thin films. The films were epitaxially grown by pulsed laser deposition on (001) SrTiO3 substrates in a temperature range of 690–810°C. According to x-ray measurements, the structure of all films is a mixture of highly oriented domains of strained orthorhombic phases (ortho-I and ortho-II) with different lattice parameters. Films deposited at 780°C show a minimum resistivity (270 μΩcm at 300 K) and a maximum magnetoresistance (8% at 5 K). These films consist mainly of ortho-I phase (a=0.393 nm). Films deposited at 690°C (predominantly ortho-II) have the highest resistivity (up to 1700 μΩcm at 300 K) and lowest magnetoresistance (3% at 5K).

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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