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Correlation Between Freeze-In Temperature of Defect Density and Hydrogen Concentration in a-Si:H

Published online by Cambridge University Press:  21 February 2011

X. Xu ,
M. Isomura ,
J. H. Yoon ,
S. Wagner  and
J. R. Abelson
X. Xu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
M. Isomura
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. H. Yoon
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
J. R. Abelson
Affiliation:
Department of Materials Science and Engineering and the Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
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Abstract

We measured the freeze-in temperature of the dangling-bond density in a-Si:H in nine samples with hydrogen concentrations ranging from 7.0 to 31 at.%. The measurements were made by determining the defect density of samples quenched from successively higher temperature. We determined the defect densities with the constant photoconductivity method. The freeze-in temperature is 211±10 °C, and is independent of hydrogen concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 69
Copyright
Copyright © Materials Research Society 1991

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References

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