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Correlation between Filament Distribution and Resistive Switching Property in Binary-Transition-Metal-Oxide Based Resistive Random Access Memory.

Published online by Cambridge University Press:  18 May 2012

H. Tanaka ,
K. Kinoshita ,
M. Yoshihara  and
S. Kishida
H. Tanaka
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
K. Kinoshita
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Univ. Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
M. Yoshihara
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan.
S. Kishida
Affiliation:
Department of Information and Electronics, Graduate School of Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan. Tottori Univ. Electronic Display Research Center, 522-2 Koyama-Kita, Tottori 680-0941, Japan.
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Abstract

Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAM. This study revealed that one of the main factors causing variation is the presence of multiple filaments which have distinct set voltages in each memory cell. An operating filament switches to another filament having the smallest set voltage at each instant of switching. We propose a resistive switching model that takes the presence of multiple filaments into consideration. A Monte Carlo simulation based on the resistive switching model reproduces the set voltage distribution. Improvement of accuracy of the simulation can be also expected considering the fact that Vset increases at a certain probability at each instant of set switching.

Keywords

oxidereactive ion etchingNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1406: Symposium Z – Functional Metal-Oxide Nanostructures , 2012 , mrsf11-1406-z18-55
Copyright
Copyright © Materials Research Society 2012

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References

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