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Correlation Between Ferroelectric and Fluorescent Properties by Introducing Eu Atoms Into Strontium Bismuth Tantalate Films

Published online by Cambridge University Press:  01 February 2011

Koji Aizawa  and
Yusuke Ohtani
Koji Aizawa
Affiliation:
[email protected], Kanazawa Institute of Technology, OEDS R&D Center, Ishikawa, Japan
Yusuke Ohtani
Affiliation:
[email protected], Kanazawa Institute of Technology, Ishikawa, Japan
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Abstract

Electrical and fluorescent properties of Sr-deficient strontium bismuth tantalate co-doped with excess-Bi and Eu atoms (BiEu-SBT) were investigated, in which the Eu/Bi ratio was changed between 0 and 0.1. BiEu-SBT were synthesized on Pt (200 nm)/Ti (50 nm)/SiO2/Si substrates by using Sr0.8Bi2.2Ta2O9 and Sr0.8(Bi2, Eu0.2)Ta2O9 mixed precursor solutions with a concentration of 0.33 mol/kg, in which Sr concentration was fixed at 0.8. From X-ray diffraction analysis, the diffraction peaks from Aurivillius phases were observed in the synthesized BiEu-SBT as well as in pure SBT. In BiEu-SBT, the lattice parameters along a- and c-axes at the Eu/Bi ratio of 0.1 in comparison with those of 0 decreased approximately 0.27 and 0.19 %, respectively. The remnant polarization (2Pr) values of the synthesized BiEu-SBT with Eu/Bi ratio of 0 and 0.1 were approximately 8.4 and 6.8 μC/cm2, respectively. From photoluminescence (PL) measurement at a wavelength of 615 nm as a function of Eu/Bi ratio, the PL intensity of the synthesized BiEu-SBT was proportional to the Eu/Bi ratio, whereas, the 2Pr values were slightly decreased by Eu-doping.

Keywords

ferroelectricluminescenceEu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D07-06
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Scott, J. F. and Paz de Araujo, C. A., Science 246, 1400 (1989).Google Scholar
2. Paz de Araujo, C. A., Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature 374, 627 (1995).Google Scholar
3. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, J., and Jo, W., Nature 401, 682 (1999).Google Scholar
4. Moon, S. E., Back, S. B., Kwun, S-II., Lee, Y. S., Noh, T. W., Song, T. K., and Yoon, J. G., Jpn. J. Appl. Phys. 39, 5916 (2000).Google Scholar
5. Aizawa, K. and Ohtani, Y., Jpn. J. Appl. Phys. 46, 6944 (2007).Google Scholar
6. Aizawa, K. and Ohtani, Y., Jpn. J. Appl. Phys. 47, 7549 (2008).Google Scholar
7. Newnham, R. E., Wolfe, R. W., Horsey, R. S., Diaz-Colon, F. A., and Kay, M. I.: Mater. Res. Bull. 8, 1183 (1973).Google Scholar
8. Rae, A. D., Thompson, J. G., and Withers, R. L.: Acta Crystallogr., Sect. B 48, 418 (1992).Google Scholar
9. Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Izumi, F., Appl. Phys. Lett. 74, 1904 (1999).Google Scholar
10. Noguchi, Y., Miyayama, M., Oikawa, K., Kamiyama, T., Osada, M., and Kakihana, M., Jpn. J. Appl. Phys. 41 7062 (2002).Google Scholar
11. Shannon, R. D.: Acta Crystallogr., Sect. A 32, 751 (1976).Google Scholar
12. Okawa, T., Imaeda, M., and Ohsato, H., Jpn. J. Appl. Phys. 39, 5645 (2000).Google Scholar
13. Atsuki, T., Soyama, N., Yonezawa, T., and Ogi, K.: Jpn. J. Appl. Phys. 34, 5096 (1995).Google Scholar
14. Chung, C. W. and Chung, I.: Thin Solid Films 354, 111 (1999).Google Scholar
15. Watanabe, Koji, Hartmann, A. J., Lamb, R. N., and Scott, J. F., Integrated Ferroelectrics 21, 241 (1998).Google Scholar
16. Mercier, B., Dujardin, C., Ledoux, G., Louis, C., and Tillement, O.: J. Appl. Phys. 96, 650 (2004).Google Scholar
17. Pradhan, A. K., Zhang, K., Mohanty, S., Dadson, J., Hunter, D., and Loutts, G. B.: J. Appl. Phys. 97, 023513 (2005).Google Scholar
18. Hartmann, A. J., Lamb, R. N., Scott, J. F., and Gutleben, C. D.: Integrated Ferroelectr. 18, 101 (1997).Google Scholar
19. Watanabe, K., Hartmann, A. J., Lamb, R. N., Craig, R. P., Thurgate, S. M., and Scott, J. F.: Jpn. J. Appl. Phys. 39, L309 (2000).Google Scholar