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Correlation Between Defect Production and Excitonic Emission in the Irradiated ZnSe-ZnS Strained-Layer Superlattices

Published online by Cambridge University Press:  25 February 2011

Maki Sekoguchi  and
Tsunemasa Taguchi
Tsunemasa Taguchi
Affiliation:
Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
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Abstract

The effects of thermal heat-treatment, N+ -ion, Ar+ -ion, γ-ray and electron-beam irradiations have been studied on MOCVD-grown ZnSe-ZnS strained-layer superlattices (SLSs) by means of low-temperature photoluminescence and X-ray diffraction measurements. As-grown SLS structure seems to be stable against the heat-treatment compared to ZnSe thin film, but after the defects are introduced in the SLS by irradiation, additional fluctuation at the interface between the ZnSe well and the ZnS barrier layers takes place. However, no significant intermixing and the changes of strain can be detected in the irradiated SLS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 383
Copyright
Copyright © Materials Research Society 1989

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References

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