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Correlation Between Crystallinity and Schottky Diode Characteristics of GaAs Grown on Siby MOCVD

Published online by Cambridge University Press:  25 February 2011

T. Egawa ,
S. Nozaki ,
N. Noto ,
T. Soga ,
T. Jimbo  and
M. Umeno
T. Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
S. Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052
N. Noto
Affiliation:
Shin-Etsu Handotai Co., Annaka, Gunma 379-01, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Japan
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Abstract

We have studied the crystallinity and Schottky diode characteristics of GaAs/Si grown by MOCVD. In comparison with two-step growth and GaP/strained layer superlattice techniques, the crystallinity and the Schottky diode characteristics are superior for the GaAs/Si with Al0.5Ga0.5P as an intermediate layer. The GaAs/Si grown with the Al0.5Ga0.5 intermediate layer shows mirror—like surface morphology and an X-ray FMHM of 188 arcs. The ideality factor of the Schottky diode fabricated on the GaAs/Si grown with the Al0.5Ga0.5P intermediate layer is 1.06, but its forward current-voltage characteristic shows a significant leakage current at small forward bias. It is also found that the composition of Al affects strongly the crystallinity and the Schottky characteristics of GaAs/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 273
Copyright
Copyright © Materials Research Society 1989

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References

1. Akiyama, M., Kawarada, Y. and Kaminishi, K., Jpn. J. Appl. Phys., 23, L843 (1984).CrossRefGoogle Scholar
2. Soga, T., Kohama, Y., Uchida, K., Tajima, M., Jimbo, T. and Umeno, M., J. Crystal Growth, 93, 499 (1988).CrossRefGoogle Scholar
3. Shichijo, H., Lee, J. W., Mchevige, Will V. and Taddiken, A. H., IEEE Electron. Device Lett., EDL–8, 121 (1987).CrossRefGoogle Scholar
4. Egawa, T., Yamada, N., Tada, H., Soga, T., Jimbo, T. and Umeno, M., Second Optoelectronics Conference Technical Digest, 108 (1988).Google Scholar
5. Noto, N., Nozaki, S., Okada, M., Egawa, T., Soga, T., Jimbo, T. and Umeno, M., this proceeding.Google Scholar
6. Rhodrick, E. H., Metal-Semiconductor Contacts, 2nd ed. (Oxford University Press, New York, 1988), p. 109.Google Scholar
7. Newman, N., Schilfgaarde, M. van, Kendelwicz, T., Williams, M. D. and Spicer, W. E., Phys. Rev. B 33, 1146 (1986).CrossRefGoogle Scholar