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Correlation between crystallinity and mid-infrared optical absorption spectra of silicon supersaturated with sulfur

Published online by Cambridge University Press:  19 March 2015

Ikurou Umezu ,
Katsuki Nagao ,
Tatsuya Nakai ,
Muneyuki Naito ,
Mitsuru Inada ,
Tadashi Saitoh ,
Tamao Aoki  and
Akira Sugimura
Ikurou Umezu
Affiliation:
Department of Physics, Konan University, Kobe 658-8501, Japan
Katsuki Nagao
Affiliation:
Department of Physics, Konan University, Kobe 658-8501, Japan
Tatsuya Nakai
Affiliation:
Department of Physics, Konan University, Kobe 658-8501, Japan
Muneyuki Naito
Affiliation:
Department of Chemistry, Konan University, Kobe 658-8501, Japan
Mitsuru Inada
Affiliation:
Department of Pure and Applied Physics, Kansai University, Suita 564-8680, Japan
Tadashi Saitoh
Affiliation:
Department of Pure and Applied Physics, Kansai University, Suita 564-8680, Japan
Tamao Aoki
Affiliation:
Department of Physics, Konan University, Kobe 658-8501, Japan
Akira Sugimura
Affiliation:
Department of Physics, Konan University, Kobe 658-8501, Japan
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Abstract

We prepared silicon hyperdoped with sulfur by ion-implantation followed by pulsed laser melting. Effects of laser fluence during pulsed laser melting and of post-annealing on the silicon hyperdoped with sulfur are investigated. The structure of hyperdoped layer changes from poly-to mono-crystal with increasing laser fluence. Interface between sulfur-implanted-layer and single-crystal substrate disappear above 1.1 J/cm2. The spectral intensity of mid-infrared (MIR) optical absorption increases with crystallinity and spectral shape depends on whether the melt depth during pulsed laser melting reaches interface between implanted layer and single-crystal silicon substrate or not. The MIR absorption intensity rapidly decreases with thermal annealing temperature and almost disappears at 750 °C. The activation energy of conductivity decreases with increasing laser fluence and further decreases with increasing post thermal-annealing temperature. The insulator-metal transition is observed for the sample annealed at 750 °C. These results indicate that there is no direct correlation between MIR optical absorption band and insulator-metal transition.

Keywords

laser annealingoptical propertiesSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1738: Symposium V – Sustainable Solar-Energy Conversion Using Earth-Abundant Materials , 2015 , mrsf14-1738-v14-05
Copyright
Copyright © Materials Research Society 2015 

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References

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