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Copper-Carbon Alloy Films by Methane Beam Assisted Epitaxial Copper Deposition

Published online by Cambridge University Press:  28 February 2011

David W. BROWN ,
Edward P. Donovan ,
Catherine M. Cotell  and
Kenneth S. Grabowski
David W. BROWN
Affiliation:
NRC Research Associate at NRL
Edward P. Donovan
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5000
Catherine M. Cotell
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5000
Kenneth S. Grabowski
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375–5000
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Abstract

Copper-carbon alloy films containing between 7 and 40 at.% carbon, as measured with 6.2 MeV He++ scattering, were deposited by ion beam assisted deposition (IBAD) on pure epitaxial Cu(100) films on Si(100) substrates. The IBAD process involved simultaneous deposition of evaporated copper (0.3 to 2.0 nm/s) and bombardment with 400 eV ions (340 μA/cm2 on target) from a Kaufman ion source fed with methane. Transmission electron microscopy (TEM) showed that an IBAD layer with 15 at.%C was epitaxial with the underlying pure Cu(100) layer. X-ray diffraction (XRD) indicated that the IBAD films were epitaxial at low carbon concentration but polycrystalline at high concentration. The small range of carbon ions in copper and the evidence of sputtering suggest that this loss of epitaxy resulted from increased surface carbon interfering with epitaxy. Although carbon and copper are immiscible, TEM and XRD have revealed no evidence of carbon precipitation, indicating that the carbon may be in solution and that such IBAD layers may be suitable for diamond formation by laser annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 729
Copyright
Copyright © Materials Research Society 1992

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References

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