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Copper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing

Published online by Cambridge University Press:  15 February 2011

G. O. Ramseyer ,
L. H. Walsh ,
J. V. Beasock ,
H. F. Helbig ,
R. C. Lacoe  and
S. Brown
G. O. Ramseyer
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Rd., Rome, NY 13441-4505, [email protected]
L. H. Walsh
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Rd., Rome, NY 13441-4505, [email protected]
J. V. Beasock
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Rd., Rome, NY 13441-4505, [email protected]
H. F. Helbig
Affiliation:
Rome Laboratory, ERDR, 525 Brooks Rd., Rome, NY 13441-4505, [email protected]
R. C. Lacoe
Affiliation:
The Aerospace Corporation, P. 0. Box 92957, Los Angeles CA 90009-2957
S. Brown
Affiliation:
The Aerospace Corporation, P. 0. Box 92957, Los Angeles CA 90009-2957
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Abstract

Patterned 930 nm Al(1%-Si) interconnects over 147 nm of Cu were electromigration lifetime tested at 1.0–1.5 × 105 A/cm2 at 250 °C. The morphology of the surfaces of the electromigrated stripes with different line widths and times to failure were characterized by atomic force microscopy, and changes in surface roughness were compared. The diffusion of copper into the electromigrated aluminum stripes was determined by depth profiling using Auger electron spectroscopy. In particular, areas where hillocks formed were examined and compared to areas of median roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 219
Copyright
Copyright © Materials Research Society 1996

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References

1. Colgan, E.G. and Robdell, K.P., J. Appl. Phys., 75, p. 3,423 (1994).Google Scholar
2. Barkshire, I.R. and Prutton, M., J. Appl. Phys., 77, p. 1,082 (1995).Google Scholar
3. Walsh, L.H., Ramseyer, G.O., Beasock, J.V., Helbig, H.F. and MacWilliams, K.P., Polycrystalline Thin Films II - Structure, Texture, Properties, and Applications, Mat. Res. Soc. Proc., 403, in press.Google Scholar
4. J.E. Sanchez Jr., McKnelly, L.T. and Morris, J.W. Jr., J. Electron. Mater., 19, p. 1213 (1990).Google Scholar
5. Atakov, E.M., Clement, J.J. and Miner, B., Proc. 33rd Annual Reliability Phys. Symp., p. 213 (1994).Google Scholar
6. Wang, W., Lanford, W.A. and Murarka, S.P., Materials Reliability in Microelectronics V, Mat. Res. Soc. Proc., 391, p. 321 (1995).Google Scholar
7. Helbig, H.F., Beasock, J.V., Ramseyer, G.O. and Walsh, L.H., Appl. Phys. Lett., 68, p. 1778 (1996).Google Scholar