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Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer

Published online by Cambridge University Press:  10 February 2011

Y. Matsubara ,
K. Endo ,
M. Iguchi ,
N. Ito ,
K. Aoyama ,
T. Tatsumj  and
T. Horiuchi
Y. Matsubara
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan
K. Endo
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki, 305, Japan
M. Iguchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan
N. Ito
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan
K. Aoyama
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki, 305, Japan
T. Tatsumj
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki, 305, Japan
T. Horiuchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan
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Abstract

We have developed a new interconnect technique using a low-k (εt,=2.5) organic interlayer (fluorinated amorphous carbon: a-C:F) and a low-resistivity metal line (copper). The new technique attains a duction in both the capacitance of the interlayer and the resistance of the metal line. We found that a-C:F on Cu reduces reflection to 10% for Kr-F line lithography. However, a-C:F cannot act as a protection layer for oxidation even at 200°C in atmospheric ambient annealing. Cu diffusion into a-C:F is about 100 nm at the annealing temperature of 450°C. The resistivity of the Cu line is 2.3–2.4 μΩ · cm for the 0.5-μm line width. Although the leakage current of the a-C:F ILD is one order higher than that of the SiO2 ILD, electrical isolation is acceptable at < 20 V when annealing is carried out at 350°C in a vacuum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 291
Copyright
Copyright © Materials Research Society 1998

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References

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