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Controtle Substitutional Doping of Cdte Thin Films and Cd 1-xMn xTe-CdTe Superlattices

Published online by Cambridge University Press:  25 February 2011

R. N. Bicknell ,
N. C. Giles  and
J. F. Schetzina
R. N. Bicknell
Affiliation:
Department of Physics, North Carolina State University Raleigh, NC 27695-8202
N. C. Giles
Affiliation:
Department of Physics, North Carolina State University Raleigh, NC 27695-8202
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University Raleigh, NC 27695-8202
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Abstract

We report the successful substitutional doping of CdTe epilayers grown by a new technique: photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. This new technique was found to produce dramatic changes in the electrical transport properties of the epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using In and Sb as n-type and p-type dopants,respectively. Photoassisted MBE has also recently been employed to produce for the first time highly conducting CdMnTe epilayers and Cd 1-xMnxTe-CdTe superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 163
Copyright
Copyright © Materials Research Society 1987

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References

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