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Controlling of Microstructure Generation by Direct Holographic Etching of Semiconductor Substrates

Published online by Cambridge University Press:  01 January 1992

K. Toyoda ,
H. Kumagai ,
M. Ezaki  and
M. Obara
K. Toyoda
Affiliation:
Laser Science Research Group, The Institute of Physical and Chemical Research (RIKEN), 2–1 Hirosawa, Wako 351–01, Japan
H. Kumagai
Affiliation:
Laser Science Research Group, The Institute of Physical and Chemical Research (RIKEN), 2–1 Hirosawa, Wako 351–01, Japan
M. Ezaki
Affiliation:
Dept. of Electrical Engineering, Keio University, 3–14–1 Hiyoshi, Kohoku-ku, Yokohama 223, Japan
M. Obara
Affiliation:
Dept. of Electrical Engineering, Keio University, 3–14–1 Hiyoshi, Kohoku-ku, Yokohama 223, Japan
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Abstract

Controlling of microstructure generation was investigated in laser etching of n-GaAs. For single-beam etching and holographic etching with high ratios of average spacing of holographic grating to average spacing of microstructures (Λh/Λr), ripple structures were fabricated. Especially in p-polarization, spatial fluctuation was greater than that in s-polarization. This might occur because phase distortion inherent in the laser beam cannot be eliminated by the p-polarization beam irradiation. For holographic etching with small Λh/Λr ratios, ripple structures were changed into grating structures because these grating structures might be generated in phase with holographic gratings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 237
Copyright
Copyright © Materials Research Society 1993

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References

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