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Controlled Thin Oxidation and Nitridation in a Single Wafer Cluster Tool

Published online by Cambridge University Press:  15 February 2011

I. Sagnes ,
D Laviale ,
F. Glowacki ,
B. Blanchard  and
F. Martin
I. Sagnes
Affiliation:
FRANCE TELECOM - CNET, BP 98, 38243 Meylan cedex, France
D Laviale
Affiliation:
FRANCE TELECOM - CNET, BP 98, 38243 Meylan cedex, France
F. Glowacki
Affiliation:
AST elektronik GmbH, Daimlerstr. 10, D-89160 Dornstadt, Germany
B. Blanchard
Affiliation:
LETI-DOPT, CENG, av. des Martyrs, BP 85 X, 38041 Grenoble cedex, France
F. Martin
Affiliation:
LETI-DMEL. CENG, av. des Martyrs, BP 85 X, 38041 Grenoble cedex, France
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Abstract

For both advanced MOS technologies (gate length ≤ 0.25.μm) and EEPROMs, the quality and reproducibility of thin dielectric films (≤ 6 nm) are essential. To obtain such dielectrics involves very precise control of the silicon surface preparation and gate oxide growth. Furthermore, research into such supplementary properties of oxide as improved SiO2/Si interface resistance to current injections or enhanced p+gate resistance to boron penetration in the channel may require nitridation treatment. Such a sequence of steps can be carried out under controled atmosphere using a cluster tool. This paper presents the preliminary results obtained in a single wafer cluster tool on i) the surface preparation under ozone of a silicon wafer immediately after diluted liquid HF treatment and ii) the nitridation of the 6 nm gate oxide under low temperature, low pressure gaseous NO. It is shown that the NO molecule can be successfully used in Rapid Thermal Processing (RTP) and allows gate oxides to be nitrided with properties at least equivalent to those obtained under N2O nitridation, but with a strikingly reduced thermal budget.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 253
Copyright
Copyright © Materials Research Society 1995

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