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Controlled Interface Roughness in GaAs/AlAs Superlattices

Published online by Cambridge University Press:  15 February 2011

William R. Miller Jr. ,
W. J. Boettinger ,
W. F. Tseng ,
J. Pellegrino  and
J. Comas
William R. Miller Jr.
Affiliation:
Current Address: Guest Scientist at NIST, on leave from Penn State University, Middletown, PA 17057
W. J. Boettinger
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
W. F. Tseng
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
J. Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
J. Comas
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
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Abstract

We report the results of our study of controlled interface roughness in low-order GaAs/AlAs superlattices. Samples were prepared using either the interrupted growth or the migration-enhanced epitaxy (MEE) technique. The samples were prepared with m atomic planes of GaAs and m atomic planes of AlAs (m × m) per modulation wavelength and repeated p times. For this study, m = 1 or 3. The samples were studied using X-ray diffraction. The interrupted growth samples both showed a split in one diffraction line indicating layers were not of integral order while the MEE samples showed no splitting, indicating integral order layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 213
Copyright
Copyright © Materials Research Society 1992

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References

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