Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:03:52.532Z Has data issue: false hasContentIssue false
  • English
  • Français

Controllability And Homogeneity Of Optical Properties Of Thin Porous Silicon Films

Published online by Cambridge University Press:  10 February 2011

S. Uehara ,
T. Kubo ,
S. Ogata ,
T. Sato ,
J. Hosono  and
T. Matsubara
S. Uehara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Kichijoji Kitamachi, Musashino-shi, Tokyo 180, Japan
T. Kubo
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Kichijoji Kitamachi, Musashino-shi, Tokyo 180, Japan
S. Ogata
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Kichijoji Kitamachi, Musashino-shi, Tokyo 180, Japan
T. Sato
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Kichijoji Kitamachi, Musashino-shi, Tokyo 180, Japan
J. Hosono
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Kichijoji Kitamachi, Musashino-shi, Tokyo 180, Japan
T. Matsubara
Affiliation:
Department of Electrical Engineering and Electronics, Seikei University, Kichijoji Kitamachi, Musashino-shi, Tokyo 180, Japan
Get access

Abstract

Reflection spectroscopy was applied to evaluate the optical homogeneity and the refractive index of thin porous silicon (PS) layer. Variation in PS layer optical thickness was evaluated by measuring and mapping the reflectance over the surface area. For the circular anodization area of 17 mm diameter, the measured variation was less than 5 % on an area of 11 mm diameter. The anodization electrode position was found to have little influence on the homogeneity. A method to derive refractive index from a reflection spectrum is studied. The wavelength dependence of PS index measured by the method showed fair coincidence with the calculation based on effective medium approximation. In the two layer PS formation, optical thickness was found to change whether high porosity or low porosity layer is formed first.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 119
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vincent, G., Appl. Phys. Lett. 64, p. 2367 (1994).Google Scholar
2. Berger, M. G., Dieker, C., Thronissen, M., Vescan, L., Luth, H., Munder, H., Theiss, W., Werke, M., Grosse, P., J. Phys. D, 27, p. 1333 (1994).Google Scholar
3. Berger, M. G., Rens-Fisher, R., Fronhoff, St., Dieker, C., Winz, K., Munder, H., Luth, H., Arntzen, M., Theiss, W., Mat. Res. Soc. Symp. Proc. 358, p.327 (1995).Google Scholar
4. Mazzoleni, C., Pavesi, L., Appl. Phys. Lett. 67, p.2983 (1995).Google Scholar
5. Pavesi, L., Mazzoleni, C., Tredicucci, A., Pellegrini, V., Appl. Phys. Lett. 67, p. 3280 (1995).Google Scholar
6. Araki, M.,Koyama, H. and Koshida, N. Appl. Phys. Lett., 68, p. 2999 (1996).Google Scholar
7. Aspens, D.E. and Theeten, J.B., Phys. Rev. B, 20, p.3292(1979).Google Scholar
8. IEE Information Service Div., Properties of SILICON, p. 72, INSPEC, The Institution of Electrical Engineers, London and New York, 1988.Google Scholar