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Control of Valence States for Zno And Zns with a Wide-Band Gap by a Codoping Method

Published online by Cambridge University Press:  01 February 2011

T. Yamamoto
T. Yamamoto*
Affiliation:
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-gun, Kochi 782-8502, JAPAN
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Abstract

We have investigated the electronic structures of p- or n-type doped ZnO and ZnS based on the basis of the analysis of the results obtained by ab initio electronic band structure calculations. We find the doping problems of the two materials. They at highly N-doping levels have the narrow impurity bands at the top of the valence band, where holes are very localized by repulsion effects. As a solution to the doping problems described above, we proposed a codoping method: The deliberate codoping of the donors with N acceptors is essential for the enhancement of N-acceptor incorporation and delocalization of the N-impurity states with the electrostatic energy gain in p-type highly doped ZnO and ZnS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.33
Copyright
Copyright © Materials Research Society 2002

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