Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:42:02.195Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of The Sb Redistribution in Strained SiGe Layers Using Point Defect Injection

Published online by Cambridge University Press:  10 February 2011

A.Yu. Kuznetsovl ,
J. Cardenast ,
J.V. Grahnt ,
B.G. Svensson ,
A. Nylandsted Larsenl  and
J. Lundsgaard Hansen
A.Yu. Kuznetsovl
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
J. Cardenast
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
J.V. Grahnt
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
B.G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40 Kista-Stockholm, Sweden
A. Nylandsted Larsenl
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
Get access

Abstract

Sb diffusion in strained Si1−xGex (x = 0.1 and 0.2) layers during nitridation (in NH3, 810 °C) and oxidation (in dry O2, 825 and 900 °C) of Si/Si1−xGex/Si heterostructures is measured and, subsequently, compared with that obtained for treatments in vacuum. An enhancement (ν) or retardation (η) of Sb diffusion in strained Si1−xGex after nitridation/oxidation anneals is detected. For example, 810 (NH3) and 900 °C (O2) anneals results in ν ∼ 2 and η ∼ 0.15 in strained Si0.9Ge0.1, respectively. The retardation of Sb diffusion is attributed to the injection of excess self-interstitials (I) and strongly indicating low interstitialcy fraction of Sb diffusion in strained Si1−xGex. The enhancement of Sb diffusion may be due to direct injection of vacancies (V), but only if the V diffusivities are significantly different in Si and Si1−xGex, or depletion of I in the strained Si1−xGex layers caused by the excess V concentration at the top surface of silicon layer

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 119
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. König, U. and Dämbkes, H., Solid-State Electron. 38, 1595 (1995).Google Scholar
2. Hueting, R.J.E., Slotboom, J.W., Pruijmboom, A., Boer, W.B.de, and Cowern, N.E.B., IEEE Transac. ED, 43, 1518 (1996).Google Scholar
3. For an extensive review see Nylandsted Larsen, A. and Kringhøj, P., Physica Scripta, T69, 92 (1997) and references therein.Google Scholar
4. Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E., and Lefforge, D., Appl.Phys.Lett. 67, 706 (1995).Google Scholar
5. Kuznetsov, A.Yu., Cardenas, J., Grahn, J., Svensson, B.G., Lundsgaard Hansen, J., and Nylandsted Larsen, A., submitted to Phys.Rev.B (980223).Google Scholar
6. Fahey, P.M., Griffin, P.B., and Plummer, J.D., Rev.Mod.Phys. 61, 289 (1989).Google Scholar
7. Noble, D.B., Hoyt, J.L., Gibbons, J.F., Scott, M.P., Laderman, S.S., Rosner, S.J., and Kamins, T.I., Appl.Phys.Lett. 55, 1978 (1989).Google Scholar
8. Mogi, T.-K., Thompson, M.O., Gossmann, H.-J., Poate, J.M., Luftman, H.S., Appl.Phys.Lett. 69, 1273 (1996).Google Scholar
9. Hayafuji, Y. and Kajiwara, K., J.Electrochem.Soc. 129, 2102 (1982).Google Scholar
10. Hu, S.M., J.Appl.Phys., 45, 1567(1974).Google Scholar
11. Kuznetsov, A.Yu., Cardenas, J., Svensson, B.G., Lundsgaard Hansen, J., and Nylandsted Larsen, A., 1998 Spring MRS Meeting, Symposium Z.Google Scholar
12. Kringhøj, P., Nylandsted Larsen, A., and Shirayev, S.Yu., Phys.Rev.Lett. 76, 3372 (1996).Google Scholar
13. Kuznetsov, A.Yu., Cardenas, J., Schmidt, D., Svensson, B.G., Lundsgaard Hansen, J., and Nylandsted Larsen, A., submitted to Phys.Rev.Lett. (980409).Google Scholar
14. Gossmann, H.-J., Haynes, T.E., Stolk, P.A., Jacobson, D.C., Gilmer, G.H., Poate, J.M., Luftman, H.S., Mogi, T.K., Thompson, M.O., Appl.Phys.Lett., 71, 3862 (1997).Google Scholar