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Control of Process-Induced Defects in the Formation of Single and Multiple layer dielectric Structures for Si Semiconductor Devices

Published online by Cambridge University Press:  03 September 2012

S. S. He ,
D. J. Stephens ,
Y. Ma ,
T. Yasuda ,
S. Habermahl  and
G. Lucovsky
S. S. He
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
D. J. Stephens
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
Y. Ma
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
T. Yasuda
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
S. Habermahl
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202
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Abstract

A low-temperature, 200–300°C, plasma-assisted oxidation-deposition process sequence has been developed for formation of SiO2/Si heterostructures. Adding a nitride layer to form an ON, or ONO composite dielectric, increases the density of trapping states, Dit, at the SiO2/Si interface, unless the entire structure is subjected to a high-temperature rapid thermal anneal, e.g., 30 s at 900°C. By interrupting the nitride deposition, and using on-line Auger electron spectroscopy, AES, the increase in Dit correlates with a migration of N-atoms to the SiO2/Si interface during the nitride deposition. There is no evidence for N-atom incorporation into the oxide layer itself. In contrast, for remote PECVD deposition of oxides onto nitrides, O-atoms react with the nitride, and form an oxy-nitride alloy interfacial region layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 653
Copyright
Copyright © Materials Research Society 1992

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References

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