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Control of Pattern Specific Corrosion During Aluminum Chemical Mechanical Polishing

Published online by Cambridge University Press:  18 March 2011

Hyungjun Kim
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
Panki Kwon
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
Sukjae Lee
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
Hyung-Hwan Kim
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
Sang-Ick Lee
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
Seo-Young Song
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
Chul-Woo Nam
Affiliation:
Memory R&D Division, Hynix Semiconductor Inc., Ichon, Korea
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Abstract

A pattern specific corrosion of aluminum wires was found during aluminum chemical mechanical polishing process. This paper presents and discusses the particular pattern dependency of the corrosion behavior and effective control methods in order to reduce the corrosion. An aluminum single damascene structure on silicon dioxide thin film was prepared and the effects of process variables and pattern configuration on corrosion behavior were extensively explored. The corrosion behavior was quantitatively analyzed using sheet resistance of corroded line. It was demonstrated that corrosion of aluminum wire was associated with cleaning media and pattern configuration. The area ratio between sub-micron size line and pads was the most important factors to determine the corrosion behavior. A post cleaning chemical including corrosion inhibitor couldn't prevent the corrosion perfectly. It was found that sacrificial dummy lines could reduce the aluminum corrosion, which suggests that the aluminum corrosion could be controlled by the structural consideration in aluminum damascene.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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