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Control of Enhanced Optical Absorption in μc-Si

Published online by Cambridge University Press:  15 February 2011

A. Kaan Kalkan  and
Stephen J. Fonash
A. Kaan Kalkan
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Stephen J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

The influence of grain size on the enhanced optical absorption of μc-Si has been investigated using films of various grain sizes prepared by solid phase crystallization. We show that we can control this grain size and therefore the degree of absorption changes. For grain sizes below a threshold range significant absorption enhancement can be seen in the photon energy range of 1 to ∼3 eV and the absorption characteristics of these films show that the dominant mode of optical transitions is indirect. A correlation between first order Raman peak broadening and enhanced absorption was found suggesting both effects are related to confinement. A simple model was developed to see how confinement in the crystallites could influence indirect optical transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 319
Copyright
Copyright © Materials Research Society 1997

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References

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