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Control of Defect Structures in CuGaSe2 Epitaxial Films

Published online by Cambridge University Press:  21 February 2011

Wei Chen ,
Gin-Lern Gu  and
Bae-Heng Tseng
Wei Chen
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung 80424, TAIWAN-R.O.C.
Gin-Lern Gu
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung 80424, TAIWAN-R.O.C.
Bae-Heng Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung 80424, TAIWAN-R.O.C.
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Abstract

An in-situ annealing process, which is conducted in the growth chamber by exposing the film to a Se beam immediately after film deposition, is developed to control defect structures in CuGaSe2 epitaxial films. TEM observations showed that the films annealed at a temperature above 450°C could completely remove anti-phase domain boundaries and effectively annihilate threading dislocations. The annealing process also changes the distributions of intrinsic point defects in the film. Photoluminescence (PL) may reflect the microstructure improvement in the films. A suppress of the donor-to-acceptor transitions caused by antisite defects and an enhancement in the PL intensity were found in a annealed film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 491
Copyright
Copyright © Materials Research Society 1996

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References

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