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Control of Chemical Reactions for Growth of Crystalline Si at Low Substrate Temperature

Published online by Cambridge University Press:  21 February 2011

Isamu Shimizu ,
Jun-Ichi Hanna  and
Hajime Shirai
Isamu Shimizu
Affiliation:
The Graduate School, Imaging Sci. & Eng. Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
Hajime Shirai
Affiliation:
The Graduate School, Imaging Sci. & Eng. Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Japan
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Abstract

A systematic study has been made on the formation of Si-network of amorphous(a-), microcrystalline(μc-) and epitaxial (epi)-Si prepared by Plasma-Enhaced (PE-) CVD under control of flow of atomic hydrogen. The control of the Si-network structures requires a deliberate selection of the precursor, i.e., SiHn (n≤53) and SiFnHm (n+m≤53), as well as an intentional acceleration of the chemical reactions for the propagation of Si-network in the vicinity of the growing surface by impinging of atomic hydrogen. A plausible interpretation was given to the growing mechanism of c-Si at low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 195
Copyright
Copyright © Materials Research Society 1990

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References

1. Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S., and Shimizu, I.:Jpn.J.Appl. Phys.,26(1987)L10 Google Scholar
2. Spear, W., Weilleke, G., LeComber, P.G., and Fitzgerrald, G.:J. Phys. (Paris), Suppl. 10(1981)C4–257 Google Scholar
3. Ucjida, Y. Ichimura, T., Ueno, M., and Ohsawa, M.:J.Phys.(Paris) 42(1981)C4–265 Google Scholar
4. Sakri, A. Glaunec, A. Le, Colin, Y., and Bonnaud, O.:Springer Proc.Phys.,35(1989) 365 Google Scholar
5. Hamakawa, Y., Okamoto, H., and Takakura, H.: Proc. 18th IEEE Photovoltaic Specialist Conf.(Las Vegas 1985)813 Google Scholar
6. Veprek, S., Iqbal, Z., and Sarott, F.A.: Phil.Mag., B45 (1982)137 Google Scholar
7. Veprek, S., Heintze, M., Sarott, F.A., Juricik-Rajman, M., and Willmott, P.: Mat.Res. Soc.Symp.Proc. 118 (1988)49 Google Scholar
8. Tsai, C.C., Thompson, R., Doland, C., Ponce, F.A., Anderson, G.B., and Wacker, B.: Mat. Res.Soc.Symp. Proc. 118 (1988)49 Google Scholar
9. Matsuda, A.:J.Non-cryst.Solids, 59/60 (1983)767 Google Scholar
10. Shimizu, I.: Proc. 13th ICALS (Asheville, NC, 1989) in pressGoogle Scholar
11. Hanna, J., Oda, S., Shibata, H., Miyauchi, A., Tanabe, A., Fukuda, K., Ohtoshi, T., Nguyen, H., and Shimizu, L.:Mat. Res.Soc.Symp. Proc., 70 (1986)11 Google Scholar
12. Shimizu, I.:J. Non-cryst. Solids, 97/98 (1987)257 Google Scholar
13. Hanna, J., Shibata, N., Fukuda, K., Ohtoshi, H., Oda, S., and Shimizu, I.:“Dis-ordered Semiconductors” ed. by Kastner, M., Thomas, G., Ovshinsky, S. (Plenum, 1987)pp345 Google Scholar
14. Schmitt, J.P.M.:J. Non-cryst.Solids, 59/60 (1983)649 Google Scholar
15. Tsai, C.C., Knights, J.C., Cheng, G., and Wacker, B.:J.Appl.Phys., 59 (1986)2998 Google Scholar
16. Yuuki, A., Matsui, Y., and Tachibana, K.: Jpn.J.Appl.Phys., 28( 1989)212 Google Scholar
17. Okada, Y., Chen, J., Campbell, I.H., Fauchet, P.M., and Wagner, S.: Proc. 13th ICALS(Asheville, NC, 1989) in pressGoogle Scholar
18. Azuma, A., Shirai, H., Hanna, J., and Shimizu, I.:Mat. Res.Soc.Symp.Proc., (San Diego, CA,1989) in pressGoogle Scholar
19. Tanabe, H., Azuma, M., Uematsu, T., Shirai, H., Hanna, J. and Shimizu, I.:Mat. Res. Soc.Symp.Proc., (San Diego, CA, 1989)in pressGoogle Scholar
20. Asano, A.: Proc.Workshop on Sunshine Project (Tokyo, 1989)126(Japanese)Google Scholar
21. Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S., and Shimizu, I.:Mat. Res.Soc. Symp. Proc., 95 (1987)225 Google Scholar
22. Reif, R.:J. Electrochem.Soc., 131 (1984)2430 Google Scholar
23. Nishida, S., Shiimoto, T., Yamada, A., Karasawa, S., Konagai, M., and Takahashi, K.: Appl.Phys.Lett., 49 (1986)79 Google Scholar
24. Hanna, J., Kamo, A., Azuma, M., Shibata, N., Shirai, H. and Shimizu, I.:Mat. Res.Soc. Symp. Proc., 118 (1988)79 Google Scholar