Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-17T14:13:37.856Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD

Published online by Cambridge University Press:  22 February 2011

D. V. Tsu ,
G. N. Parsons ,
G. Lucovsky  and
M. W. Watkins
D. V. Tsu
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
G. N. Parsons
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
M. W. Watkins
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
Get access

Abstract

This paper describes Optical Emission Spectrocopy (OES) and Mass Spectrometry (MS) studies of the plasma region in the Remote Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous hydrogenated silicon (a-Si:H) and silicon oxide thin films. In Remote PECVD, only the O2/He mixture is plasma excited, silane is introduced into the deposition chamber well below the plasma region. Deposition of films has been studied over a wide range of relative He and O2flows, between 100% He and 100% O2. The incorporation of SiH in the oxides derives from the same mechanism as the deposition of a-Si:H, i.e., a metastable He induced fragmentation of silane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 73
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wieder, H.H., J. Vac. Sci. Technol. 17, 1009 (1980)Google Scholar
2. Lucovsky, G. and Tsu, D.V., J. Vac. Sci. Technol. A5, 2231 (1987)CrossRefGoogle Scholar
3. Batey, J. and Tierney, E., J. Appl. Phys. 60, 3136 (1986)Google Scholar
4. Richard, P.D., Markunas, R.J., Lucovsky, G., Fountain, G.G., Mansour, A.N. and Tsu, D.V., J. Vac. Sci. Technol. A3, 867 (1985)Google Scholar
5. Tsu, D.V. and Lucovsky, G., J. Vac. Sci. Technol. A4, 480 (1986)Google Scholar
6. Candler, Chris, Atomic Spectra and the Vector Model, (D. Van Nostrand Co., Inc., Princeton New Jersey, 1964) p. 365 Google Scholar
7. Handbook of Physics and Chemistry, 67th ed., (CRC Press, Boca Raton, Florida, 1986)Google Scholar
8. Reactive Intermediates in the Gas Phase, ed. by Setser, D.W., (Academic Press, New York, 1979) p. 153 Google Scholar
9. Pearse, R.W.B. and Gaydon, A.G., The Identification of Molecular Spectra, 4th ed., (Chapman and Hill, New York, 1984)Google Scholar
10. Tsu, D.V., Parsons, G.N. and Lucovsky, G., J. Vac. Sci. Technol. A6, (1988, in press)CrossRefGoogle Scholar
11. Tsu, D.V. and Lucovsky, G., Mat. Res. Soc. Symp. Proc. 77, 595 (1987)Google Scholar
12. Parsons, G.N., Tsu, D.V. and Lucovsky, G., J. Non-Cryst. Solids (12th ICALS, in press)Google Scholar
13. Parsons, G.N., Tsu, D.V. and Lucovsky, G., (To be published)Google Scholar
14. Tanaka, K. and Matsuda, A., Materials Science Reports 2, 139 (1987)CrossRefGoogle Scholar
15. Balamuta, J., Golde, M.F. and Ho, Yueh-Se, J. Chem. Phys. 79, 2822 (1983)Google Scholar
16. Longeway, P.A., Estes, R.D. and Weakliem, H.A., J. Phys. Chem. 88, 73 (1984)Google Scholar
17. Tsu, D.V. and Lucovsky, G., Mat. Res. Soc. Symp. Proc. (Spring 1987, in press)Google Scholar