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Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD

Published online by Cambridge University Press:  28 February 2011

Nobuhiro Fkuda ,
Kenji Miyachi ,
Hirofumi Tanaka ,
Takashi Igarashi  and
Sadaaki Yamamyto
Nobuhiro Fkuda
Affiliation:
Central Research Institute, Mitsui Toatsu Chemicals Inc., 1190 Kasama-cho, Totsuka-ku, Yokohama, Kanagawa, 247 Japan
Kenji Miyachi
Affiliation:
Central Research Institute, Mitsui Toatsu Chemicals Inc., 1190 Kasama-cho, Totsuka-ku, Yokohama, Kanagawa, 247 Japan
Hirofumi Tanaka
Affiliation:
Central Research Institute, Mitsui Toatsu Chemicals Inc., 1190 Kasama-cho, Totsuka-ku, Yokohama, Kanagawa, 247 Japan
Takashi Igarashi
Affiliation:
Central Research Institute, Mitsui Toatsu Chemicals Inc., 1190 Kasama-cho, Totsuka-ku, Yokohama, Kanagawa, 247 Japan
Sadaaki Yamamyto
Affiliation:
Central Research Institute, Mitsui Toatsu Chemicals Inc., 1190 Kasama-cho, Totsuka-ku, Yokohama, Kanagawa, 247 Japan
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Abstract

CO2 laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 25
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Fukuda, N., Ogawa, S., Abe, K., Ohashi, Y. and Kobayashi, S., Proc. International PVSEC-1 Kobe (1984) 107.Google Scholar