Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-03T01:43:53.833Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of Al Orientation on Si(100) Substrate Using a Partially Ionized Beam

Published online by Cambridge University Press:  25 February 2011

C.-H. Choi ,
R. Ramanarayanan ,
S.-N. Mei  and
T.-M. Lu
C.-H. Choi
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181
R. Ramanarayanan
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181
S.-N. Mei
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181
T.-M. Lu
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181
Get access

Abstract

We report an investigation of Al films deposited on Si(100) surfaces by a partially ionized beam. By controlling the Al ion to atom ratio in the beam and the bias potential applied to the substrate, two different orientations, namely, the Al(110) and the Al(111) faces, can be formed on the Si(100) substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 267
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Harper, J.M.E., Cuomo, J.J., Gambino, R.J. and Kaufman, H.R., in Ion Bombardment Modification of Surfaces: Fundamentals and Applications, edited by Auciello, O. and Kelly, R., Elsevier Science Publishers, Amsterdam (1984), p. 127.Google Scholar
2. Itoh, T., Nakamura, T., Muromachi, M. and Sugiyama, T., Jpn. J. Appl. Phys. 15, 1145 (1976); T. Itoh and T. Nakamura, Jpn. J. Appl. Phys. 16, 553 (1977).Google Scholar
3. Narusawa, T., Shimuzu, S. and Komiya, S., J. Vac. Sci. Technol. 16, 366 (1979).Google Scholar
4. Rockett, A., Barnett, A.S. and Green, J.E., J. Vac. Sci. Technol. B2(3), 306 (1984).Google Scholar
5. Tagaki, T., J. Vac. Sci. Technol. A2(2), 382 (1984); and references therein.Google Scholar
6. Wong, J., Lu, T.-M. and Mehta, S., J. Vac. Sci. Technol. B3, 453 (1985); R. Ramanarayanan, K. Polasko, D. Skelly, J. Wong, S.-N. Mei and T.-M. Lu, J. Vac. Sci. Technol. B 5, 359 (1987); J. Wong, S.-N. Mei and T.-M. Lu, Appl. Phys. Lett. 50(11), 679 (1987).Google Scholar
7. Kern, W., and Puotlineu, D.A., RCA Rev. 31, 187 (1970).Google Scholar
8. Yang, S.-N., Choi, C.-H., Mei, S.-N., and Lu, T.-N. (unpublished).Google Scholar
9. Yamada, I., Inokawa, H. and Takagi, T., J. Appl. Phys. 56, 2746 (1984).Google Scholar