Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-04T21:15:13.963Z Has data issue: false hasContentIssue false
  • English
  • Français

Contributions of Gas Phase Reactions to CVD Processes

Published online by Cambridge University Press:  25 February 2011

S. B. Desu  and
Surya R. Kalidindi
S. B. Desu
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute, Blacksburg, VA 24061;
Surya R. Kalidindi
Affiliation:
Department of Mechanical Engineering, MIT, Cambridge MA 02139.
Get access

Abstract

An analytical model to account for the effects of gas phase reactions in CVD processes is presented. In this model a system with only two reactions, gas phase production of an intermediate and reaction of the intermediate on the surface of the substrate to form the film is considered. The reaction kinetics, convective and diffusive transport mechanisms are coupled to analyse the thickness distribution over the length of the reactor.

Theoretical deposition rate profiles in the direction of gas flow are shown with varying deposition temperatures and gas flow velocities for both surface and gas phase reaction controlled mechanisms. It has been shown that by analyzing the nature of the deposition rate profiles, the rate limiting step in a CVD process can be identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 307
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sladek, K. J., J. Electrochem. Soc., 118, 654 (1971).Google Scholar
[2] Coltrin, M. E., Kee, R. J. and Miller, J. A., J. Electrochem. Soc., 11, 425 (1984).Google Scholar
[3] Brekel, C. H. J. Van Den and Bollen, L. J. M., J. Cryst. Growth, 54, 310 (1981).CrossRefGoogle Scholar
[4] Scott, B. A., in Semiconductors and Semimetals, edited by Pankove, I. (Academic Press Inc., New York 1984) Vol.21, Part A, pp. 123.Google Scholar
[5] Putte, P. Van Den, Giling, L. J. and Bloem, J., in Semiconductors and Semimetals, edited by Pankove, I. (Academic Press Inc., New York), 31, 299 (1975).Google Scholar
[6] Tsuda, M., et. al., Jap. J. Appl. Phys., 26, L564 (1987).Google Scholar
[7] Ito, S., Chinohara, T. and Seki, Y., J. Electrochem. Soc., 120, 1419 (1973).CrossRefGoogle Scholar
[8] Frolov, I. A., et. al., Izv. Akad. Nauk SSSR, Neorg. Mater., 13, 773 (1977).Google Scholar
[9] Desu, S. B., J. Amer. Ceram. Soc., to be published.Google Scholar
[10] Jensen, K. F. and Graves, D. B., J. Electrochem. Soc., 130, 1950 (1983).Google Scholar