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Continuous-Film Thickness Determination by AES of Cr Overlayers on Cu Surfaces

Published online by Cambridge University Press:  22 February 2011

H. Lefakis
Affiliation:
IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099
P.S. Ho
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598-9989
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Abstract

The characteristics of Cr coverage of Cu surfaces, including determination of tc, the minimum average film thickness required for formation of a continuous film, have been studied in-situ by Auger Electron Spectroscopy (AES). Auger signal intensities of substrate and deposit were monitored during Cr film growth by vapor deposition in UHV. It was shown that substrate surface morphology (roughness) has a dominant effect on coverage rate and tc. Slower coverage rates and larger tc′s were effected by the presence of native oxides, substrate heating (to 330°C) and H2O-vapor rich (5×10−5 Torr) ambient during Cr deposition. Surface oxides seemed to affect more the coverage of a smooth than a rough surface. Conversely, substrate heating affected more the coverage of a rough surface. The combined effect of substrate heating and water vapor rich atmosphere was pronounced for both smooth and rough surface coverages. Some of the main factors controlling these effects are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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