Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T10:25:54.569Z Has data issue: false hasContentIssue false
  • English
  • Français

A Continuous Heterogeneous Model for the Crystalline to Amorphous Transition in Ion Implanted Semiconductors : Relationship to the “Critical Damage Energy Density” Model

Published online by Cambridge University Press:  15 February 2011

C. Vieu ,
A. Claverie ,
J. Faure  and
J. Beauvillain
C. Vieu
Affiliation:
LMM/CNRS, 196 avenue H. Ravera, 92220 Bagneux, France
A. Claverie
Affiliation:
Lawrence Berkeley Laboratory, 1 cyclotron road, Barkeley CA 94720, USA CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
J. Faure
Affiliation:
Laboratoire de Microscopie Electronique, 21 rue C. Ader 51100
J. Beauvillain
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
Get access

Abstract

A method is presented for calculating amorphization doses of ion implanted semiconductors, based on a continuous heterogeneous description of damage accumulation. This new approach is compared to the classical “critical damage energy density” (CDED) model. For high dose implantations the equivalence of both descriptions is formally established. It is proposed that the main limitation of the CDED model lies in the linear additivity of damage rather than the homogeneous damage build-up.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 165
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Stein, H.J, Vook, F.L, Brice, D.K., Borders, J.A. and Picraux, S.T., in Proceedings of the 1st International Conference on Ion Implantation (Gordon and Breach, London, 1971), P. 17.Google Scholar
2. Jones, K.S., Sadana, D.K., Prussin, S., Washburn, J., Weber, E.R. and Hamilton, W.J., J. Appl. Phys. 63 (5), 1414 (1988).Google Scholar
3. Claverie, A., Roumili, A., Gessin, N. and Beauvillain, J., MRS Proc. Symp A Boston Fall (1990), in print.Google Scholar
4. Carter, G. and Webb, R.P., Radiat. Eff. 42, 159 (179).Google Scholar
5. Vieu, C., Claverie, A., Faure, J. and Beauvillain, J., Nucl. Instr. Meth. B 36, 137 (1989).Google Scholar
6. Brice, D.K., J. Appl. Phys. 46 (8), 385 (1975).Google Scholar
7. Thompson, D.A. and Walker, R.S., Radiat. Eff. 36, 36 (1978).Google Scholar
8. Jimenez-Rodriguez, J.J., Gras-Marti, A. and Carter, G., Phys. Stat. Sol. (a) 81, 267 (1984).Google Scholar
9. Vieu, C., Claverie, A., Faure, J. and Beauvillain, J., to be published.Google Scholar