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Contact-Related Deep States in AI-GaInP/GaAs Interface

Published online by Cambridge University Press:  22 February 2011

Z.C. Huang  and
C.R. Wie
Z.C. Huang
Affiliation:
Department of Electrical and Computer Engineering and Center for Opto-Electronics of Materials, State University of New York at Buffalo, Buffalo, NY 14260
C.R. Wie
Affiliation:
Department of Electrical and Computer Engineering and Center for Opto-Electronics of Materials, State University of New York at Buffalo, Buffalo, NY 14260
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Abstract

Deep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 209
Copyright
Copyright © Materials Research Society 1994

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