Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:05:20.614Z Has data issue: false hasContentIssue false
  • English
  • Français

Contact hole shrink and multiplication by directed self-assembly of block copolymers: from material to integration

Published online by Cambridge University Press:  16 March 2015

Raluca Tiron ,
Xavier Chevalier ,
Ahmed Gharbi ,
Maxime Argoud ,
Patricia Pimenta-Barros ,
Mireille Maret ,
Patrice Gergaud ,
Tanguy Terlier ,
Jean-Paul Barnes  and
Christophe Navarro
...Show all authors
Raluca Tiron
Affiliation:
LETI, Grenoble, France.
Xavier Chevalier
Affiliation:
ARKEMA, Lacq, France.
Ahmed Gharbi
Affiliation:
LETI, Grenoble, France.
Maxime Argoud
Affiliation:
LETI, Grenoble, France.
Patricia Pimenta-Barros
Affiliation:
LETI, Grenoble, France.
Mireille Maret
Affiliation:
SIMAP, CNRS Grenoble, France
Patrice Gergaud
Affiliation:
LETI, Grenoble, France.
Tanguy Terlier
Affiliation:
LETI, Grenoble, France.
Jean-Paul Barnes
Affiliation:
LETI, Grenoble, France.
Christophe Navarro
Affiliation:
ARKEMA, Lacq, France.
Guillaume Fleury
Affiliation:
ENSCPB, Bordeaux, France.
Georges Hadziioannou
Affiliation:
ENSCPB, Bordeaux, France.
Get access

Abstract

Density multiplication of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitation of conventional lithography. Using the 300mm pilot line available in LETI and Arkema’s materials, the main objective is to integrate DSA directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. Thus we investigate the potential of DSA to address contact and via level patterning by performing either CD shrink or contact multiplication. Our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Lithographic performances of block copolymers are evaluated both for contact shrink and contact doubling. Furthermore, advanced characterization technics are used to monitor in-film self-assembly process. These results show that DSA has a high potential to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution contact holes.

Keywords

lithography (removal)self-assemblynanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1750: Symposium KK – Directed Self-Assembly for Nanopatterning , 2015 , mrsf14-1750-kk04-03
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Cheng, J.Y. et al. ., ACS. Nano., 2010, 4, 4815.CrossRefGoogle Scholar
Bencher, C. et al. ., Proc. of SPIE 2011, 79700F-4Google Scholar
Chevalier, X. et al. ., Proc of SPIE 2011, 7970 Google Scholar
Chevolleau, T. et al. ., Proc of SPIE 2012, 8328–20Google Scholar
Tiron, R. et al. ., JVST B, 29, 06F206, 2011 CrossRefGoogle Scholar
Tiron, R. et al. , Proc. of SPIE 2012, 8323–23Google Scholar
Tiron, R. et al. ., Proc. SPIE, 868012 (2013)Google Scholar
Chevalier, X. &al., J. Micro/Nanolith. MEMS MOEMS 12(3), 031102 (2013).CrossRefGoogle Scholar
Gharbi, A. et al. , Proc. of SPIE 2014, 90491NGoogle Scholar
Argoud, M. et al. , Proc of SPIE 2014, 904929Google Scholar
Servin, I. et al. Jpn. J. Appl. Phys., 2014, 53, 06JC05CrossRefGoogle Scholar
Maret, M. et al. , Macromolecules 2014, 47, 7221–7229 CrossRefGoogle Scholar
Terlier, T. et al. , Surf. Interface Anal. 2014, 46, 83–91 CrossRefGoogle Scholar