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Contact Effects in High Mobility Microcrystalline Silicon Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

Kah Yoong Chan ,
Eerke Bunte ,
Helmut Stiebig  and
Dietmar Knipp
Kah Yoong Chan
Affiliation:
[email protected], Jacobs University Bremen, School of Engineering and Science, Research Center Jülich, Institute of Photovoltaics, 52425 Juelich, Germany, Juelich, 52425, Germany, +49-2461-61-2069, +49-2461-61-3735
Eerke Bunte
Affiliation:
[email protected], Research Center Jülich, Institute of Photovoltaics, Jülich, 52425, Germany
Helmut Stiebig
Affiliation:
[email protected], Research Center Jülich, Institute of Photovoltaics, Jülich, 52425, Germany
Dietmar Knipp
Affiliation:
[email protected], Jacobs University Bremen, School of Engineering and Science, Campus Ring 1, Bremen, 28759, Germany
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Abstract

Microcrystalline silicon (mc-Si:H) has recently been proven to be a promising material for thin-film transistors (TFTs). We present mc-Si:H TFTs fabricated by plasma-enhanced chemical vapor deposition at temperatures below 200°C in a condition similar to the fabrication of amorphous silicon TFTs. The mc-Si:H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5V. Such high mobilities are observed for long channel devices (50-200 mm). For short channel device (2 mm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with decreasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contacts.

Keywords

devicesplasma-enhanced CVD (PECVD) (deposition)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A11-03
Copyright
Copyright © Materials Research Society 2007

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