Published online by Cambridge University Press: 16 February 2011
We examine the growth modes of compound semiconductors grown by molecular beam epitaxy in lattice matched and strained layers. While in lattice matched layers it is possible to grow in the layer by layer mode by choosing proper growth conditions, in strained layers we find that for large strain, it is not possible to do so. This is due to the competition between surface strain energy which favors 3D growth and surface chemical energy which favors a layer by layer growth mode. The growth mode is shown to have significant effects on the nature of the dislocations generated beyond critical thickness.